We recently purchased a new multitarget RF/DC sputtering system, with the possibility of flowing some gases during the growth. Substrates we are planning to use are; silicon, silicon oxide, and quartz.
Use RF sputtering system. If you want to grow very smooth film then use low power, If you increase the power, the particle sizes will increase. Also change the biasing voltage.
To reduce the stress in the films while deposition, try to introduce the maximum allowable gas flow. But this will result in reduced deposition rates due to reduced mean free path of the sputtered atoms.
Is sputtering of silicon in N2 atmosphere is the best method for it? What would be optimal substrate temperatures during the deposition? Thank you Saqib and Radha.
Yes, for your case it would be most suited if you do not care about film composition. because increased gas flow might also increase the Si/N ratio. I am not aware of the best suited temperature, as I am not growing films of SiNx.
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