any suggestion on calculating the doping ratio [B2H6:SiH4] of p-type silicon nanowire (SiNW) based on growth (CVD) recipe/parameters or measuring the doping ratio of the NW via characterization tools? any suggestion would be greatly helpful.
Dear Farhad,
One simplest way to estimate the doping concentration is to assume that the diborane and the silane completely dissociate at the substrate and thereby their ratio in solid will be equal to their ration in gas. That is if the gas ratio of diborane to silane is x, then the the solid ratio of B; Si will be 2x. That is if x=1ppm then doping ratio of boron in silicon will be 2x. This assumption is well valid if the dissociation temperature is relatively high. It may be also that silane may dissociate at higher rate than diborane at the same temperature. In this case the doping concntarion will be much be less than x.
The practical way is that one has to calibrate the doping process by measuring the mixing ratio in the gas phase and the doping concentration after deposition.
The paper in the link may be useful to you:http://citeseerx.ist.psu.edu/viewdoc/download?doi=10.1.1.829.5864&rep=rep1&type=pdf
best wishes
Dear colleague Farhad Khosravi ,
Have a nice time and good day.
The attached link for Z.U. Boresova contains what is the ratios of doping and allowing.
I wish this is useful and help you.
Yours
A. El-Denglawey
https://link.springer.com/book/10.1007%2F978-1-4757-0851-6
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