Dear all,
I would like to ask about a diagnostic measurement method that will give me information if my pn junction grown by Chemical Vapor Deposition (CVD) is electrically active or not.
The situation is that, suddenly, my Si pn junction solar cell devices I make does not work (i.e., the conversion efficiency I measure for the recent samples is 0.1%, although grown with the same fabrication methods that used to work and results to efficiency of around 4% to 5%). My investigation has not yet covered the checking of the pn junction's quality. Physically, the junction was visible as checked by SEM, but I wish to confirm if there is an electric field within the junction that can facilitate charge separation in the device. The growth temperature was at 750 degrees C, and the gas dopants were SiH4 (19 sccm) and B2H6 (0.5 sccm), and N2 was flown during growth at 30 sccm.
Any advice is appreciated. Thank you very much.
@ Wang Xin : Just the basic planar Si solar cell. No texturing on the front, only back-side annealed and with Ag front contact and Ti/Ag back contact.
Bern Yu Jeco-Espaldon If electrochemically you wish to gain insights of your pn junction formation, charge carrier statistics for electric field you could go for Mott-Schottky plot analysis for your fabricated configuration. Mott-Schottky Plot is plotted between capacitance and potential.
The p-type semiconductor will give you a negative slope while n-type will give you a positive slope of the curve.
On the formation of p-n junction you might get a curve showing both characteristics of p and n type semiconductor.
For more information on p-n junction curve you may refer
https://www.researchgate.net/publication/356392632_Rational_design_of_TiO_2_BiSbS_3_heterojunction_for_efficient_solar_water_splitting
M.K.
Thank you very much everyone for your kind answers, this has been resolved. It seems that there is no way but to the process the solar cell until contact formation and then measure the I(V) curve. as suggested.
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