I am using TCAD sentaurus to simulate GaN devices. Should I start by matching IdVg at low Vds? Could someone provide a reference material/text for calibration?
work function , mobility model , saturation velocity , start with them 1st and see
The calibration work can be similar to compact modeling calibration such as BSIM.
It is preferred to read some articles about fitting several I-V and C-V data using BSIM.
I think that matching IdVg at low Vds would be a good start, especially in the subtreshold region by calibrating work function of metal gate.
And then, you modulate the mobility models and values depending on the structure of the device.
If the GaN device is operated in the saturation region, you need to modulate saturation velocity by fitting IdVg at high Vds and also IdVd at several Vgs.
Best regards,
Jun-Sik Yoon
Thank you Khaled, Beddiaf and Jun-Sik Yoon!
Jun-Sik you mentioned about articles fitting I-V using BSIM. Icould not any relevant article.Coyld you please refer any relevant article which I can use. Also, I am almost able to match Vt value at Vd=50 mv. However, my Off current is very high in experimental data but I am getting a very low Ioff in simulations. For example, Ioff,exp= 10-3 mA/mm and Ioff,sim=10^-14 mA/mm.
Can someone suggest what should I do? I tried introducing band to band tunneling simple model using Si parameters as GaN parameters are not available, but it makes Ioff more than Ion.
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