I am trying to order a doped sputtering target of Indium Antimonide (InSb) and would like to dope it with Tellurium (Te). The desired carrier number density is about 5x1018/cm3. How to convert this to wt%? As I need to specify how much wt% of Te I need to add in InSb.
The atomic mass of Te is 127.6 u, so you need 5x127.6x1018 u Te/cm3 assuming every Te atom creates a carrier (if not, multiply by a corresponding factor). This corresponds to 1.06x10-3g Te/cm3. The density of InSb is 5.75g/cm3. Now, technically you would have to sum up atom numbers and divide by the overall count, but the difference is negligible when we have orders of magnitude in difference as in this case. So you can approximate by 1.06x10-3/5.75=1.8x10-4 which equals 0,018%.
The Te doped InSb crystals has been grown applying a vertical directional solidification process (VDS-Process) in our lab (India). These publication are available on RG. If you don't follow it, then will send details.
To convert the desired carrier number density of 5x1018/cm3 to wt% of Tellurium (Te) in Indium Antimonide (InSb), you will need to know the atomic weights of the elements and the density of the material.
It's worth mentioning that this calculation assumes that the doping of the InSb with Te is homogeneous and that the density of InSb+Te remains constant after doping. However, this is not always the case and the actual doping level achieved may differ from the calculated values.
It's also important to notice that getting the exact carrier number density is not always possible, depending on the manufacturing process, the purity of the materials, the dopant distribution and other factors.
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