At the values for the electron effective mass= 0.22 and the hole effective mass = 0.79, the
dielectric constant =11.1, and band gap energy=2.26 for GaP, calculate the
intrinsic carrier concentration at 300K.
Asrar,
Since the effective density of sate Nc in the conduction band is proportional to me^3/2 and that of Nv like wise proportional to mh^3/2, then one can determine the effective density of sates by knowing the effective masses and the effective density of sate of a reference material such as silicon with Nc= (cm-3)2.82 x 1019 and NV (cm-3)1.83 x 1019 , the effective masses: me*,dos/m0 =1.080 mh*,dos/m = 0.81
Nc = Ncsi ( me/mesi)^3/2= (.22/ 1.08)^3/2 Nsi= 2.6 x10^18 ? cm^3
Nv= 1.83 10^19/cm^3
then you can determine the ni from the relation
ni^2= SQR( Nc Nv exp - Eg/ Vt)
Eg= 2.26 eV and kT = .0256 eV,
It is reaming to substitute the values and compute ni
Make this yourself self and report
Best wishes
Asrar,
Since the effective density of sate Nc in the conduction band is proportional to me^3/2 and that of Nv like wise proportional to mh^3/2, then one can determine the effective density of sates by knowing the effective masses and the effective density of sate of a reference material such as silicon with Nc= (cm-3)2.82 x 1019 and NV (cm-3)1.83 x 1019 , the effective masses: me*,dos/m0 =1.080 mh*,dos/m = 0.81
Nc = Ncsi ( me/mesi)^3/2= (.22/ 1.08)^3/2 Nsi= 2.6 x10^18 ? cm^3
Nv= 1.83 10^19/cm^3
then you can determine the ni from the relation
ni^2= SQR( Nc Nv exp - Eg/ Vt)
Eg= 2.26 eV and kT = .0256 eV,
It is reaming to substitute the values and compute ni
Make this yourself self and report
Best wishes
Here is the way how to calculate the intrinsic carrier concentration of GaP at 300K
see the pdf file attached below.
I hope this could help you
Regards,
Prof. A. Kadri
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