Dear Fahime Yarjanli ,

welcome!

You have no generation current because you do not have any incident photon flux.

So, this is expected.

In the first part of your list of results you have dark condition with a bias voltage =0.6 V.

Then in the last part of the list you illuminated the solar cell and therefore you get

a short-circuit current,

So, in order to further complete the answer of your question I want to know what are the bias and the illumination of your solar cells.

As conceptual answer:

You have zero Auger recombination because the carrier concentration is too low to affect appreciable Auger recombination.

The recombination current at the interfaces = The total recombination current - The volume recombination current which is the sum of SRH and radiative recombination.

Best wishes

Thank you

I define "beam" and "bias voltage " parameters in silvaco and Then have obtained the current density values.

In this part, I define "photogenerate rate" parameter in "probe". photogenerate rate × q( 1.6 ×10e-19) = photogenarate current density = 47.02 mA/cm2

How to calculate Back contact recombination current density? For this part I define SRV in contact parameter

Dear Fahime Yarjanli ,

Hope you are well!

In order to obtain the generation current you must calculate it like that:

I gen= q G d ,where q is the electronic charge, G the generation rate and d is the thickness of the absorbing layer.

Please take care that the dimensions of G is 1/cm^3. while the current density is per cm^2.

Yes you are right in order to determine the back surface recombination current you have to define a surface recombination velocity vss.

VSS varies from few cm/s to 10^7 cm/s.

The resurface recombination current itself cam be expressed by

Isre= q vss ns

where ns is the excess carrier concentration at the the back surface.

Best wishes