Hey.

May someone provide me with some good hints to introduce a sulfur incorporation into the surface region of already grown CuInGaSe2 films and thereby creating a Cu(In,Ga)(S,Se)2 MIXED CRYSTAL. I would like to avoid the formation of a pure CuInS2 surface layer. Regarding earlier studies this seems to be easier to achieve by using H2S instead of elemental sulfur...

Appreciate any helpful comments here.

Best, Jan.