. The heteroe junction exhibited a clear rectifying I-V characteristic with a turn-on voltage V. At zero-bias voltage, the peak responsivity which is one of the best performances reported for example GaN/ ZnO heterojunction detectors due to the excellent crystal quality of the bilayer films. These show that the high-performance GaN/ ZnO heterojunction diode is potential for applications of portable UV detectors without driving power.
There are several ways to improve the linearity of a heterojunction photodetector, some of which are:
Reduce the surface recombination velocity: Surface recombination velocity can cause nonlinearity in the heterojunction photodetector. By reducing the surface recombination velocity, the linearity of the device can be improved.
Optimize the thickness of the absorber layer: The thickness of the absorber layer can affect the linearity of the heterojunction photodetector. An optimized absorber layer thickness can help to improve the linearity.
Reduce the number of defects in the absorber layer: Defects in the absorber layer can cause nonlinearity in the device. By reducing the number of defects in the absorber layer, the linearity of the device can be improved.
Improve the quality of the interface between the two layers: The interface between the two layers in a heterojunction photodetector can affect the linearity of the device. By improving the quality of the interface, the linearity of the device can be improved.
Use a graded bandgap structure: A graded bandgap structure can help to improve the linearity of the heterojunction photodetector. This is because it can reduce the built-in potential and improve carrier collection efficiency.
Optimize the doping concentration: The doping concentration can affect the linearity of the heterojunction photodetector. An optimized doping concentration can help to improve the linearity.