its clear The ideality factor n was obtained from the gradient of the linear region of the semi-logarithmic portion of the forward I–V plots
they noted that ideality factors of more
Pn and MSM Schottky diodes are typically much larger than unity,
attributed to either tunneling, interface states, and/or the influence
of deep recombination centers indicating inhomogeneity of the barrier height caused by a non-uniform distribution of interface states,, and/or existence of inter-facial thin native oxide layers at the metal and thin film or nano particle interface for MSM