How to calculate Urbach energy from direct and indirect energy band gaps using UV-spectrum for the amorphous glasses? and it is necessary to be calculated? Why?
Along the absorption coefficient curve and near the optical band edge there is an exponential part called Urbach tail. This exponential tail appears in the low crystalline, poor crystalline, the disordered and amorphous materials because these materials have localized states which extended in the band gap. In the low photon energy range, the spectral dependence of the absorption coefficient (α) and photon energy (hν) is known as Urbach empirical rule, which is given by the following equation:
α = αo exp (hν/EU)
where αo is a constant and EU denotes the energy of the band tail or sometimes called Urbach energy, which is weakly dependent upon temperature and is often interpreted as the width of the band tail due to localized states in the normally band gap that is associated with the disordered or low crystalline materials. Taking the logarithm of the two sides of the last equation, hence one can get a straight line equation. It is given as follows:
ln α = ln αo + (hν/EU)
Therefore, the band tail energy or Urbach energy (EU) can be obtained from the slope of the straight line of plotting ln (α) against the incident photon energy (hν).
Firstly Urbach energy is a function of disorder or localized states so the crystallization will have many defects, the degree of defects depends on the value of Urbach energy. To calculate it you should have both T and R of the material, bulk or film and according to the equation that mentioned through those two papers you will get it. both T and R you can use as 0.00 (decimal).
In amorphous materials, due to absence of long range order, valence band and conduction band do no have sharp cut off but have tails of localized states. Due to these band tails, optical absorption edge is not sharp and has tail at lower energies. When we make Tauc plot we do not get straight line in the whole energy range. Urbach tail is related to localized states at band edges. The method suggested above is good enough for the calculation of Urbach energy.
Along the absorption coefficient curve and near the optical band edge there is an exponential part called Urbach tail. This exponential tail appears in the low crystalline, poor crystalline, the disordered and amorphous materials because these materials have localized states which extended in the band gap. In the low photon energy range, the spectral dependence of the absorption coefficient (α) and photon energy (hν) is known as Urbach empirical rule, which is given by the following equation:
α = αo exp (hν/EU)
where αo is a constant and EU denotes the energy of the band tail or sometimes called Urbach energy, which is weakly dependent upon temperature and is often interpreted as the width of the band tail due to localized states in the normally band gap that is associated with the disordered or low crystalline materials. Taking the logarithm of the two sides of the last equation, hence one can get a straight line equation. It is given as follows:
ln α = ln αo + (hν/EU)
Therefore, the band tail energy or Urbach energy (EU) can be obtained from the slope of the straight line of plotting ln (α) against the incident photon energy (hν).
How necessary to calculate the urbach energy of semiconductor after doping ? the method still seem not clear,.after the slop and intercept value how to get the urbach energy in meV?