I need mathematical relation of input signal power, bias current, confinement factor, carrier at transparency and carrier recombination coefficient for saturated power.
for example ; what are the parameters I need to change for saturated power of 13 dbm and small signal gain of 25 db.?
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a simplified approach to TWSOA modelling is presented in the attached paper
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I don't understand your question, because the small gain could not writ as dBm.
sorry, misspelled... i questioned about small signal gain in dB only. can u please give me detailed numerical value of SOA parameters regarding the same
Following publications can be consulted regarding saturated output power in a Semiconductor optical travelling wave amplifier
G. P. Agrawal and N. A. Olsson, “Self phase mosulation and spectral broadening of optical pulses in semiconductor optical amplifiers,” IEEE Journal of Quantum Electronics, Vol. 25, No. 11, 1989, pp. 2297-2306.
N. A. Olsson and G. P. Agrawal, “Spectral shift and distortion due to self-phase modulation of picosecond pulses in 1.5 µm optical amplifiers,” Applied Physics Letters, Vol. 55, No. 13, 1989, pp. 13-15.
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