I have a thin film of perforated Al (40nm-80nm). I have read that ideally Al should be annealed at 1/3rd the melting point of bulk Al. However, would an oven suffice or does it need an inert environment? Also for how long?.
Preferably a good vacuum oven/furnace would be the best choice. Inert gas environment can sometimes have oxygen impurity, hence I would suggest vacuum over/furnace which go up to the required temperature.
Removing the thin Al layer to reduce graft may occur under special conditions. Such withdrawal conditions can be accomplished by electron beam treatment (EBM) in vacuum under appropriate operating modes. Gravel is reduced with controlled current parameters and frequency of impact. Thermal surface treatment can also be realized to improve the technological and mechanical properties.
Besides the use of a vacuum oven, you need to take into account that Al surface is oxidized. Then, after a vacuum of 10-6 Torr, you can erase the Aluminium oxide film with Argon ions accelerated by 1 KV DC.
Look for someone with a DC-arc PVD deposition system because this type of equipment commonly has heating systems lamps. For the annealing temperature, I have not experience but it doesn't t matter if it is a thin film or a thick one.