Hi;
I am rather new to Comsol and I was hoping you guys could kindly help me get started!
I am trying to model a silicon p-n junction to study the transient drift-diffusion after I optically excite the junction by a Gaussian femtosecond laser pulse.
I have a preliminary model, but the study only shows the transient for the formation of the junction potential (like when you just bring the n-type and p-type together and then the junction forms) and does not show anything about the indirect optical transition and the following processes. I was wondering how I could force the study to start with the fully equilibrated p-n junction which is now being optically excited.
I introduce the pulse by using three Gaussian functions (gb1(x)*gb2(y)*gb3(t)) and then use the f(x,y,t) as my E0 which the only place I can use is E0 in the semiconductor model, which I know is not correct (but I couldn't find any other place to use it)
Thanks a lot,
Abe
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