i am currently trying to reproduce a paper on Double channel GaN HEMT. The code doesn't converge for the upper barrier to be AlGaN(17nm) over AlN(1.5nm) while it works well for upper barrier to be AlGaN(17nm) only . Also GaN cap layer creates convergence issues. what can be the possible cause and its solution. i have used these models
models print srh drift.diffusion polarization calc.strain polar.scale=1
mobility albrct.n
gate workfunction: 5ev
source/drain workfunction: 3.93 ev