I have done both C-f and C-V measurements at room temperature (300 K) for my devices. However I am not sure on how to estimate the trap density of states (tDoS) since I am not sure of the dielectric constant and attempt to escape frequency. I see some papers have plotted the tDoS by this technique (e.g. doi:10.1038/ncomms6784). However there is no mention on how these two parameters were estimated. I want to compare two different devices where the active layers processed under different conditions. Will the dielectric constant and attempt to escape frequency be the same for the two. Is it possible and right to estimate tDoS without performing C-f measurements at different temperatures?