Mostly PIN diode data sheets we have equivalent circuits for forward and reverse states. I want to use a lumped element based On and off states. Does anybody know how to get values AT GHz ranges as most data sheets testing is based on MHz ranges or any relation or mathematical workout via which we can calculate those values? I know in forward we need resistor and in reverse we require capacitor.
Any references or literature will also be appreciated
First of all, you cannot use a diode which is designed to work at MHz range in a GHz circuit.
You need a Schottky diodes with very low parasitic inductance (200pH or less) and low parasitic capacitance (50 fF or less) for GHz application.
You can measured diode power spectrum by injecting power signal at GHz input frequency from Network analyzer. Then you can measured scattering parameter. If you found power spectrum has no power gain at some input frequencies. I will assume that the diode was cut off that input power frequencies. Usually, diode equivalent circuit is just parallel RC circuits. But if you can not find reasonable value which can matching with your experiment results at any input signal frequencies. You should add input matching circuit and output matching circuit with the parallel RC circuits.
Hi Arian, i would suggest that you start looking for a higher operation frequency diode like you said in GHz rather than using standard diodes which may not be stable in operation and the book Analog electronics by Boylestad, specifically chapter 2.... Thats the best reference i have so far.
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