Regards,
We need to synthesize In nanowires with different proportions of Ga on the surface. The preparation of In nanowires is simple using a high temperature catalytic process. The problem for us is how to deposit Ga on the surface in a very homogeneous way.
Any suggestions would be very grateful.
https://infoscience.epfl.ch/record/202250/files/ComparisonSurfaceSiOxide-Ga-assistedGrowthGaAsNanowires.pdf
https://infoscience.epfl.ch/record/212252/files/MatteiniWettingGaSiOxGaAsNWs.pdf
https://epub.uni-regensburg.de/33202/7/dis.pdf
http://www.ifpan.edu.pl/rn_ifpan/Siusys-doktorat.pdf
https://repositorio.uam.es/bitstream/handle/10486/665971/surface_garcia_jap_2014.pdf?sequence=1
https://arxiv.org/pdf/1307.6113.pdf
If u r looking for depositing Ga on top of a NW thin film then, any physical deposition method with low deposition rate can be used such as E-beam, MBE, etc... But If you have NW network or vertically aligned forest and u want the Ga to deposited deep inside the NW forest and you can try electrochemical deposition methods..
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