Is there a measurement method for Fermi level for a semiconductor or heterojunction, i.e, semiconductor/metal oxide/metal.
This can be estimated via Scanning Tunneling Microscopy (STM) and spectroscopy (STS) based methods. Here's a recent paper where we've described this method in detail for a different system (iron sulfide):
Herbert, F.W., Krishnamoorthy, A., Van Vliet, K.J., Yildiz, B., “Quantification of electronic band gap and surface states on FeS2(100),” Surface Science. 618 53-61, 2013.
You should be able to access this article from ResearchGate.
Dear Ahmet: I am not an expert in this field, but just an educated guess. Is it possible to study the conductivity as a function of temperature and deduce the number of free carriers from that data and from that Ef value?
Dear Ahmet
You can estimate the work function (WF= the energy difference between the Fermi and the vacuum level) of a thin film by measuring its UPS (ultraviolet photoelectron spectroscopy) spectrum. You can estimate the WF value from the secondary electron cut-off.
Thank you Krystyn and Maria. Krystn the paper is very helpful for me thank you.
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