You can study the properties and test the heterojucntions by the following methods:
- Measure the I-V curve
If the junction is rectifying it will show rectifier I-V curve.
- Measuring the C-V and g-V characteristics of the junctions.
- You can use the Kelvin probe
To utilize the C-V and g-V measurements to characterize heterojunctions please refer to the paper in the link:Article Capacitance and conductance of ZnxCd1-xS/ZnTe heterojunctions
You can study the properties and test the heterojucntions by the following methods:
- Measure the I-V curve
If the junction is rectifying it will show rectifier I-V curve.
- Measuring the C-V and g-V characteristics of the junctions.
- You can use the Kelvin probe
To utilize the C-V and g-V measurements to characterize heterojunctions please refer to the paper in the link:Article Capacitance and conductance of ZnxCd1-xS/ZnTe heterojunctions
KPFM is certainly a good technique to identify such heterojunction. You can probe the different contact potential for the heterojunction.
However I believe Scanning Tunneling Microscopy is a better technique.
Here you can probe the topography and from DOS Spectra even you can calculate band positions or any kind of band bending. You will find such papers where a pn junction in a single nano rod has been mapped.
If you need such measurements, our group is available for sustainable collaborations.