In general, the majority carrier types in semiconductors can be determined by Hall effect or hot probe analysis. However, if you are asking particularly about II-VI semiconductors like ZnS, CdS, CdTe, ZnTe etc, then it can be noted that most of the II-VI semiconductors have strong preference to any one type of conductivity due to the self compensation effect. For example, CdS, ZnS have strong preference to n-type. It is very difficult to dope them p-type. On the other hand, ZnTe has strong preference to p-type. If I am not wrong, CdTe is the only II-VI compound which can be doped easily with n-type and p-type dopants.
Hot point probe technique was used to determine the conductivity type of the films. The hot point probe test is a common technique for rapidly determining the type of semiconductor. A hot and a cold probe are connected with a voltmeter as shown in Fig(see file)., hot probe creates excess majority carriers that diffuse away leaving net charge buildup
You can determine the semiconductors whether they are n-type or p-type by Mott-Schottky analysis. This is an easy method for the determination of n-or p-type behavior...
In general, the majority carrier types in semiconductors can be determined by Hall effect or hot probe analysis. However, if you are asking particularly about II-VI semiconductors like ZnS, CdS, CdTe, ZnTe etc, then it can be noted that most of the II-VI semiconductors have strong preference to any one type of conductivity due to the self compensation effect. For example, CdS, ZnS have strong preference to n-type. It is very difficult to dope them p-type. On the other hand, ZnTe has strong preference to p-type. If I am not wrong, CdTe is the only II-VI compound which can be doped easily with n-type and p-type dopants.
Ideally, such compound semiconductors are intrinsic but as hinted at above, they have a propensity to be either p-type or n-type due to characterisic defects associated with their formation and the environment. For instance, ZnO tends to be n-type as it is prone to contain oxygen vacancies which tend to result in a very high density of free electrons. The engineering challenge is to suppress such effects so that the doping level can be controlled.