I am looking for a method to perform shallow recess (few nm) on AlGaN and I found papers on atomic layer etching of III-arsenides but none on ALE of III-nitrides. I know that nitrides are harder to etch but do you think I can use ALE to etch this kind of materials ?
Do you have any ideas of parameters I should use in my ICP-RIE ? The ones I found on GaAs were the following using ECR-RIE
- T = 25 °C
- P = 1 mTorr
- 35 W micro-wave power during the Cl2 adsorption step
- 50 W micro-wave power and 6 W RF power during the etching step using Ar plasma
Am I wrong thinking that I have to increase the power to etch nitrides ? Would it work if I only increase steps duration or temperature ? And how should I choose the pressure ?
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