The method modeling the lumped elements in FD-TD has bee studied by many researchers. I remember Piket-May's paper in IEEE MTT, 1994 would be the first work.
Actually, her method is that one-cell of FD-TD is replaced with the differential equation of the lumped model. The detail is in her paper.
That is called an impedance boundary condition. A literature search with this keyword will turn up hopefully all you need.
Does the following link answer your question?
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=554608
In RF, lumped devices are easily modeled by simple networks of ideal RLC componencts.
Take a look on section 1.2 of this book " Signal Integrity: From High Speed to Radiofrequency Applications - Fabien Ndagijimana ISBN: 978-1-84821-550-4 Wiley-ISTE http://eu.wiley.com/WileyCDA/WileyTitle/productCd-1848215509.html
This section describes the behaviour and model of components in high frequencies.
Good luck
there are components act as capacitor or inductor in microwave, like interdigital gap capacitor, loop and spiral inductor and so on.
for analysis of these structures, you have tow ways: 1.using simulation software like FEKO and HFSS.
2. using equivalent structures those are available, in microwave engineering book especially, book 'MICROWAVE FILTERS...', written by Matthaei.
wish could help you.
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