The 9Cr18 material was implanted with N and Ti.
I want to analyze the distribution of N and Ti elements in the metal.
The best way to analyses the implantation is TEM. RBS and XRD also gives the information but in these case concentration of Implanted element and the depth of implantation matters a lot.
You may try use SEM - EDS analysis for element distribution.
I used EDS- point analysis and mapping.
I guess it depends how the implentation is done...
But in general: Electron Back Scatter Diffraction - SEM
It will give you the grain size distribution and potential changes of crystallinity. THe best would be to in fact map the same surface before and after implantation.
Another option depending on the degree of doping to XRD is micro-SAXS/WAXS mapping to get an idea of the homogeneity.
you will found Ga in EDS spectra if you use Ga-ion for example ,i preferred use TEM for that case
How precise do you want to be and how fast do you want the information? SEM/EDS is fast, but not too precise ~0.5 to 1% and pretty disperse in terms of mapping. AES is often an order of magnitude more precise, but does take longer to get results.
Secondary Ion mass spectroscopy is a good device for ion identification but if you want to see the distribution, the FeSEM equipped with WDS Or EDAX is useful. Furthermore, except for EDAX, the XRF also identify the presented elements in the sample
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