I am currently working on a project "Transfering 3D structure to silicon using RIE machine" from oxford. So I was wondering if someone could help me with the recipe, to obtain Selectivity of 1:1 and Anisotropy of 1. The gases available in my university's clean room are CHF3, SF6, O2, Ar. I am already trying with some recipes but still, I think it would be so helpful if someone could suggest a recipe.
advanced anisotropic silicon etching for MEMS applications. This paper looks at the reasons behind this dominance for high etch rate, deep anisotropic etching. A discussion of anisotropic etch mechanisms highlights the need for sidewall passivation to meet these requirements. Results are presented of a novel room temperature advanced silicon etch process: >= 2 micrometers /min; >= 70:1 selectivity to resist (and >= 150:1 to oxide); up to 30:1 aspect ratio; 500 micrometers depth capability; using a non-toxic, non-corrosive environmentally acceptable fluorine-based chemistry.
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