I am trying to synthesize carbon nitride thin film using chemical vapour deposition technique. I have gone through several literature but can't find a proper way to do it. If I use CH4 and N2 as a precursor gas will it work? What should be the gas ratio and will I require any substrate heating? Kindly answer me.
What kind of CVD? you are going o struggle to crack the N2 unless you go to pretty high temperatures or, easier, use a plasma.
Dear Dr. Oliver A Williams, it is 2.45 GHz ECR PE-CVD we are operating at.
Dear Soumik,
thank you for sharing this very interesting technical question with the RG community. The idea of using methane and elemental nitrogen (CH4 + N2) as precursors for carbon nitride thin films is not bad at all. However, as indicated by Oliver A Williams you need to employ a plasma-assisted chemical vapor deposition technique. For an interesting study in which this method is reported please have a look at the following potentially useful article:
Preliminary Synthesis of Carbon Nitride Thin Films by N2/CH4Microwave Plasma Assisted Chemical Vapour Deposition: Characterisation of the Discharge and the Obtained Films
Article Preliminary Synthesis of Carbon Nitride Thin Films by N2/CH4...
Unfortunately this paper is not freely available as public full text on RG. However, no less than five of the seven authors have RG profiles. Thus you can easily request the full text directly from one of the authors via RG (provided that it is of interest to you).
Good luck with your research work and best wishes, Frank Edelmann
Thats should work fine. There ate loads of papers on SiN and if you search carbon nitride ecr you get lods like:
https://www.infona.pl/resource/bwmeta1.element.elsevier-06fd3164-97e9-319c-9ba8-4011665faa3a
This uses acetylene but methane will also crack to methyl anyway.
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