I have a Si p-i-n diode structure with semiconducting iron disilicide quantum wells inside the i-Si layer. The width of the QWs is about 25 nm. Under reverse bias (at the avalanche mode), clear and significant red shift of the photoresponse edge is observed. I suppose that it results from quantum cinfined Stark effect. Next, I want to calculate energy shift of the ground state and compare it with experimental results. One can easily solve it for the case of the infinite quantum wells and weak field regime. In my case, the quantum well is finite and high field is applied.

Could anyone please help me with this situation?

As a starting point I have chosen Article (see attachement).

Applied Field range: 0,2-2,4 MV/m.

m*=0.83 m0(electrones) and 0.21 m0 for holes.

Barriers height is about 0.2 eV

Quantum well width is 25 nm

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