This is after performing photolithography, which exposes regions of silica (SiO2) of my Si substrate. I'd like to etch the oxide away chemically, like adding a chemical for a certain period of time. Also if you know of any publishe protocols. Thanks!
Hi Mina, the usual wet chemical method is using Hydrofluoric acid, but this is very nasty stuff to use. Reactive ion etching would be the "nicer" way of doing this.
Diluted HF solution may be used and standardized for etching your exposed oxide part. Careful use would etch very easily and quickly.
A dilute HF solution works but you realy have to up your lab safety game when using it. Its very dangerous so i wouldn`t recomend it. Rather use plasma etching.
It is just your usual RF etching, i have found this complex because it can be difficult to know the actual energy of the plasma.
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