400 nm Al pads on 200nm a-Si:H on c-Si. I just want to remove the a-Si:H and do not care about roughness of the c-Si substrate. Method should be cheap and easy to handle.
For selective wet etching of amorphous silicon over aluminium, you may consider: (i) glacial acetic acid (HAc) + H2O (0.5―1 wt %) + Br2 (≤ sat.); or (ii) glacial HAc + H2O (0.5―20 wt %) + Na2Cr2O7·2H2O (≤ sat.).
Dear Shigeharu Monoe, according to the web-site it seems to be perfect, but I will have problems to buy a small amount for testing in a reasonable time :-(
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Thanks Carlos: I will try option (ii) that can be done very easily here.