Sreekanth Ginnaram
e-mail: [email protected]
Department of electronic engineering
Chang Gung University
Taiwan.
https://in.linkedin.com/pub/ginnaram-sreekanth/38/a11/179
It depends on the number of layers of graphene. A single layer of Graphene will undergo good adhesion to the SiO2 surface. The oxygen defect on the SiO2 surface may shift the Fermi level of Graphene thereby enhancing the hole doping effect of Graphene onto SiO2 substrate. This can be observed experimentally. This depends on the number of surface defects of SiO2 rather than thickness. On increasing the thickness of SiO2, this effect should logically decrease due to lowering of surface/volume ratio. This may in turn effect the mobility within junction devices if fabricated using this material combination. Please refer to the papers attached.
Barrie Gilbert Sir,
Yes, my question is about SiO2 thin film on top of the Single layer graphene/Substrate.
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