is it possible to grow compound semiconductor crystals like III-IV & II-VI by slow evaporation technique? especially GaAs single crystals by solution growth?
I don't know if you will have access to this, but this may be of help: http://pubs.acs.org/doi/abs/10.1021/cm501280e
Dear Sir, for its too hard to download this paper due to no facility in our institution as well in my friends circle. so can u please give us in the pdf form, if u dont mine
No , metallic compounds can only be grown by high temperature methods: by cooling their melt at controlled rate.
No. Not possible by the technique proposed in your question.
Before growth of crystals in your question, first of all need to know the physical properties of metallic compounds. Particularly in case of As, it has high thermal evaporation pressure, so it escape during growth. Therefore, it is necessary to learn the properties of III-V and II-VI compound.
If possible, refer the bulk compound growth in our ResearchGate.
The paper I linked to above shows a hybrid approach where deposition does come from a solution phase aerosol. While not bulk solution phase deposition, it is clearly showing that hybrid systems can work.
Dear Ramamoorthy Sengan,
For a simple organic compound slow evaporation technique is enough, but for GaAs you have to use (Liquid Encapsulated Czochralski
Growth ) different or unique method.All the best!...
https://www.google.co.in/url?sa=t&rct=j&q=&esrc=s&source=web&cd=1&cad=rja&uact=8&ved=0ahUKEwiwj-qxz7jNAhVMLY8KHaPnCYwQFgghMAA&url=http%3A%2F%2Fjournals.cambridge.org%2Farticle_S0883769400064174&usg=AFQjCNEUXRK13eXmQKtR3cPR4PZXY29wxA&sig2=lNxfOQ2iounpQkO4yQoJWw&bvm=bv.124817099,d.c2I
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.Gallium arsenide (GaAs) is an important semiconductor material for high-cost, high-efficiency solar cells and is used for single-crystalline thin film solar cells and for multi-junction solar cells.
Dear Mr. Sengan,
One can grow single crystalline layer of GaAs by some methods:
The molecular beam epitaxy where the gallium and arsenic are evaporated in very low rate and condensed in a heated Ga As single crystal sub state. This is a physical deposition technique and requires very high vacuum but it has the ability to deposit very thin layers for optoelectronic devices.
There is also the liquid phase epitaxy where the materials to be deposited are dissolved in a fluxing material in the proper temperature and then brought in contact with the heated substrate. In case of the presence of a temperature gradient the materials will be deposited.
The last method is the gas phase expitaxy where the chemical compounds in the gas phase are made to react at the hot surface of the substrate to deposit gallium and arsenic in the proper nixing.
There is many literature on this topic and on growing crystals for the different semiconductors.
Best wishes