Hello everyone,

does anyone know the formula for field-enhanced ionization?

I can not find anything online or in semiconductor physics books available for me.

For Al-doping in SiC the thermal ionization seems to be quite low at moderate temperatures (~18% at 300K), but with applied voltage it seems to be higher. And I know that there is field-enhanced ionization, but i would like to calculate it in order to check my measurements (DLTS).

Thank you very much in advance!

Kind regards,

Tom Becker

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