Hello everyone,
does anyone know the formula for field-enhanced ionization?
I can not find anything online or in semiconductor physics books available for me.
For Al-doping in SiC the thermal ionization seems to be quite low at moderate temperatures (~18% at 300K), but with applied voltage it seems to be higher. And I know that there is field-enhanced ionization, but i would like to calculate it in order to check my measurements (DLTS).
Thank you very much in advance!
Kind regards,
Tom Becker