Hello,
I have a question regarding the paper, "Microbolometer Technology Using Serial PN-Diodes" published in IEEE. The paper was presented at the 2013 ISCDG IEEE International Semiconductor Conference in Dresden.
In the paper the authors use 4 pn diodes connected in series as a temperature sensor. This offers an advantage over a single pn diode as the voltage temperature coefficient is increased (-7mV/K for 4 diodes as opposed to -1.7mV/K for 1). In effect the sensitivity is increased by 4.
They state and indeed show graphs as evidence that the 4 diodes have to be "electrically isolated" by etching the silicon between them. However the diodes are in effect not electrically isolated as they are connected together using metal interconnects.
I contacted the authors for more details however they were unable to assist as they are bound by intellectual property agreements with collaborators.
Any ideas?
Thanks