I`ve already deposited TiO2 on my glass substrate and I want to make a pattern on glass/TiO2. If you have any idea please let me know also about the recipe and mixing ratio of acids.
TiO2 thickness: 800 nm
Glass thickness: 500 um
Many thanks~
you can also try buffered hydrofluoric acide (BHF), it etches at a speed of approximately 2nm/sec... check the web page of microposit company to look for this product... best!
You can do the wet etching by using hot sulfuric acid as will as dry etching. Please find the attached paper
you can also try buffered hydrofluoric acide (BHF), it etches at a speed of approximately 2nm/sec... check the web page of microposit company to look for this product... best!
Using buffered HF will be the easier way to go. If you have an ion miller, you could try physical etching.
If the substrate is silica or glass, you can try hot orthophsphoric acid (H3PO4), temperature about 150C.
for TiO2 thin films using H3PO4–H2O2 etching solution, temperature about 100C.
Please find the paper"Wet Etching of Amorphous TiO2 Thin Films Using H3PO4–H2O2 Aqueous Solution"
A TiO2 layer over glass can be etched with hot (to boiling) sulphuric acid.
Hi Amir, hot sulphuric acid is usually the one I use. It works pretty well and often easier to handle than viscous phosphoric acid.
@ Andrea Foli
What is the typical etching time of TiO2 in hot sulphuric acid You also heat the acid near boiling point (approx. 337°C)?. I have to deposit about 3 um of TiO2 as a sacrificing layer on a optical fiber.
But guys, on patterned sample, wet etching method may result in some undercut problem right?
Even I need to etch TiO2, but I am looking for anisotropic etch. Can anybody suggest me, which one is better whether dry etching or wet etching in case of TiO2 etching.
Hi,
For TiO2 wet etch, try 2% HF or SC-1 (APM - Ammonia Peroxide Mixture). APM is the chemical used in RCA-1.
Unfortunately, when I was looking for the same issue, I've never found any convenient TiO2 wet etchant. Other option being KOH, which is alkaline solution is not allowed in CMOS grade fabs.
However, I'd recommend Dry Etch.
I have gone through some literature that suggest that TiO2 films are difficult to etch even using strong acidic solutions. Is it really so? Many suggest to go for dry etching. But at the moment I would like to stick to wet etching for my processes and a slight undercut (isotropic etching) is not an issue with me. I have very thin oxide films say below 5nm. Any suggestions would be most welcome.
Mixture of NH4OH and H2O2 in 1:5 ratio at 80C can etch TiO2 at rate of 4 nm/min.
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