Is it possible to use a thin layer of SiO2 or Si3N4 to stop the diffusion of annealed Ni/Ge/Au/Ni/Au contacts in a III-V structure such as InAlAs-InGaAs-InP? If the answer is yes, what should be the minimum thickness of such a layer?
Thanks for your help!
Bonjour M. Thibault,
I believe yes, though I have no hard data proven, no time to check this myself, but try to find out if data on diffusion of discrete Elements through SiO2 / Si3N4 exists, I would give Si3N4 the higher chance to work, thickness? If it really works as stop layer that means practically no elements diffuse through a (perfect!) layer, a rather thin layer must be sufficient (all or nothing principle).
Dear Herbert,
Thanks for your answer. My idea was to put the smallest size of nitride since it has an effect on the optical properties of my sample.
I guess I have to try the "perfectness" of the SiN growth in our facility. :)
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