MSM and lateral PIN (LPIN) photodetectors under illumination exhibit photocurrent at their respective terminals. This photocurrent is due to the collection of the photo generated electron-hole pairs in the structures, mainly those carriers generated in the depleted regions. Does anybody know which of the two structures, MSM and LPIN is more efficient in collecting these carriers in the case of comparable applied bias and structure geometry? Anybody knows of any such study (theoretical or experimental) published in the literature?
These two photodetectors have been studied a lot. There are many studies comparing their response speed, their bandwidth, their compatibility for integration in IC, ... etc.
My question is whether there has been any study of a fundamental advantage of any of these two detectors in regard the collection efficiency of photo generated carriers?