I am trying to clean/hydroxylate the surface of a blank silicon chip (with SiO2 layer on surface) by using piranha. I have freshly prepared a 2.5:1 solution of piranha solution (with new peroxide that has been stored in the fridge) and soaked the chips for 30 mins or 90 mins.
I then rinsed the chips with DI water 3x and took a contact angle measurement using DI water within 10 minutes of the piranha treatment and the CA was 45 degrees (an average of 4 measurements on different areas of the chip surface). I have seen in the literature that the CA for a freshly piranha treated Si chip should be around 0-10 degrees, based on the hydrophilic Si-OH surface. Any ideas where this could be going wrong?
TIA :)
My material processing days are long a go so please take my thoughts with a grain of salt.
How were the wafers cleaned prior to the piranha treatment? I recall from my aluminum etching days any organic contamination could really mess things up.
I looked up this cleaning process for reference. - https://www.modutek.com/silicon-wafer-cleaning-solutions-for-wet-processing-applications/
good luck!
Yüzeydeki silisyum dioksit tabakası temizleme sırasında oksitlenmiştir. Tabaka saf silisyum dioksit ile temizlenmeye çalışılmalıdır.
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