Can we use Rutherford Backscattering Spectroscopy (RBS) to investigate the boron concentration and distribution in case of boron doped hydrogenated amorphous silicon a-Si:H(B)?
This is likely seemed difficult because boron atom is lighter than substrate material , Si. When your target atom is lighter than substrate, then small peak of target atoms places on the large substrate peak, and it usually makes hard to interpret the spectrum. I think you need other methods such as ERD (Elastic Recoil Detection). You can see oxygen peak clearly separated from peaks of heavy elements in the attached ERD spectrum.