I have seen literature with Pulsed laser deposition of Gallium nitride thin film using Nitrogen gas atmosphere. Is it possible to use Argon gas atmosphere?
Pulsed Laser Deposition system can be used for GaN thin film. However, I suggest use high quality /purity nitrogen. First evacuate your system up to 10^-7 Torr and then insert Nitrogen at some specific pressure. You might have to find the optimum conditions by varying N pressure as well as laser fluence.
Argon and Nitrogen have different physical and chemical properties.
Argon is for all intents and purposes totally inert. Nitrogen is reactive, but not under any conditions. Furthermore, Nitrogen adsorbs to surfaces more than argon does, this may be an issue and affect on the PLD procedure, but nitrogen is usually cheaper. In addition, it depends on the purity of the Nitrogen. In my opinion 99% N2 is the best.
Pulsed Laser Deposition system can be used for GaN thin film. However, I suggest use high quality /purity nitrogen. First evacuate your system up to 10^-7 Torr and then insert Nitrogen at some specific pressure. You might have to find the optimum conditions by varying N pressure as well as laser fluence.
Yes, but the film would be slightly nitrogen-deficient. Generally best results would be with Ar/N2 mixture, 5-10% of nitrogen. But it would demand additional optimization run.
It is good to use a GaN target firstly, and I fully agree with the previous suggestion of Dr. Peter Borisovich, indicating Ar/N2 gas mixtures. Of course high substrate temperature are necessary in case of PLD.
Likely you will end up off-stiochiometry with Ga rich film if you use Ar. Much better to nitrogen bearing gas or gas micture. The best films I ever got were made with methane but N2 and Ar/N2 were pretty good also. BTW, I was using pure Ga targets doperd with various impurities @10e15-10e-17 levels and reactive sputtering.