CTLM as the common method and MRCTLM as the new methods are used to measure Si/metal contact resistance. But I like to know that how can we use Kelvin structure to measure Si/metal contact resistance?
I treated this problem in my research paper given in the link:https://www.researchgate.net/publication/232710923_A_Zekry_and_G_El-Dllal_effect_of_MS_contact_on_the_electrical_behavior_of_solar_cells_Journal_of_solid-state_Electronics_Vol31_No1_19
In this paper i used the three electrode method to measure the metal- silicon contact. It is a variant of the Kelvin four probe method for measuring small resistances of a wire without the effect of the IR drop on the contact resistance.
If you have any further question please return to me.
Best wishes
Article A. Zekry and G. El-Dllal, “ effect of MS contact on the elec...
Actually I'm using CTLM pattern to measure the specific contact resistivity between metal and high-doped Si which is Ohmic contact. My problem is that the slope of total resistance (Rt) as a function of gap spacing (d) is too small (the values of Rt are close to each other) and the transfer length is too large.
Now, I want to know that how I can improve my system and what is the best method to measure the contact resistivity!
you use circular patterns to measure the contact resistance by changing the separation d between the inner edge r1 of the outer metal area and the outer diameter r0 of the of the inner metal circular pad. The total resistance between the inner and outer electrode increases linearly with d. According to the simplified theory of this method the slope of the resulting straight line Slope=RS/ 2 pi r1
Accordingly it seems that Rs is small and r1 is large i your experiment. You need to make r1 smaller, you can also increase RS by making the heavily doped layer thinner.
For more information about the method please refer to the link:http://scholarbank.nus.edu.sg/bitstream/handle/10635/14040/CHAPTER%202.PDF?sequence=7