It is hard to find (to my knowledge) the conductivity of the sample by PL measurement.  But you can measure the optical band gap of your samples. Just go ahead an google " low temperature and room temperature PL spectroscopy. I am no expert in PL.

Avishdek Das is right, you cannot directly measure conductivity by PL. PL does, in some few materials, have some kind of correlation with mobility and/or carrier concentration, but I would not suggest trying to determine conductivity this way.

Provided PL arises from band-to-band recombination, the energy at which PL starts to occur is the band gap. Often, the PL peak position is taken to be the bandgap for simplicity.

Thanks Sir Avishek Das and Dr. Manuel Schnabel for the information. Maybe I can use UV-Vis to measure the conductivity of my sample. :-)

Why not considering transport measurements for conductivity determination? In semiconductors the conductivity is given by carrier density and mobility. Both quantities are hardly determined by PL.

Agree with Avishek Das and Manuel Schnabel .. you can easily determine the bandgap of the semiconductor material by PL ..

To determine the electrical conductivity .. you may use the Hall effect measurement or I-V measurement system .. since the resistivity is reciprocal to the conductivity.

PL can give u near band edge emission which is approximately the band gap of the material. Many reports have been published so far, for example on wide band gap semiconductors like zinc oxide. But, conductivity can't be ascertained from PL. But u can find the intrinsic defect levels and traps present in the material. Conductivity studies can be done using 2 or 4 probe set up. Hope I added some thing what already Experts have clarified.

Nur Zuraihan When a semiconductor or a dielectric material is excited above the bandgap energy and as a result of relaxation, luminescence is observed is called photoluminescence. As a result of relaxation, if only photons are emitted, the bandgap will be a "direct" bandgap, while, if in addition to photons, phonons are also emitted, the bandgap will be an "indirect" bandgap. Since, the phonons emission is due to the defects, impurities, and dopants between CB and VB. When only photons are emitted, the relaxation is called radiative, while, when only phonons are emitted, the relaxation is called nonradiative. We can only find the bandgap energy from PL data in the case of radiative relaxation (direct bandgap). In nonradiative relaxation, when an electron passes its energy to the phonons, is called Shockley–Read–Hall recombination and when a relaxing electron passes its energy to another electron or hole is called Auger recombination. From PL data, intensity, line edge, and FWHM are the characteristics parameters i.e. higher intensity means low defect density and greater FWHM gives poor structure and vice versa. In addition to all the above, the energy bandgap calculation from PL data is subject to many limitations. For example, PL emissions do not give an exact bandgap like UV-Vis absorbance (Tauc plot). The bandgap calculated by the PL study will always be less than the original bandgap. Emission spectra are usually solvent dependent and are shifted with the change in solvent polarity due to solvent relaxation, the excitation spectra are usually preferred for bandgap calculations.

In the following video, I have explained all the above discussions in detail. Links to the files used in the Origin tutorial video have been provided in the video description. Thanks

https://youtu.be/WCPSil8uryg