Dear @ Abid,

welcome,

From the conceptual point of view, in order to build a solar cell you have to construct it by a p-n junction diode or by a pin diode.

So, if you start with intrinsic silicon, i-silicon, then the most staright forward structure based on it a pin diode.

So, you can as tart with an i- layer and supply it with a p+-type layer from one side and an n+-type layer from the other side. Where the p and n end layers are heavily doped emitter regions.

These layers can be in form of heterojunctions where the n+-layer is made of a-Si heavily doped with n-type impurity and the same is valid for the p- type layer.

The n-side is covered wit ITO and the p-side is supplied by silver metal layer.

This is a proposal for you.

To be able to design a solar cell please refer to my book chapter:Chapter Solar cells and arrays: Principles, analysis and design

Best wishes

Dear @ Abid,

welcome,

From the conceptual point of view, in order to build a solar cell you have to construct it by a p-n junction diode or by a pin diode.

So, if you start with intrinsic silicon, i-silicon, then the most staright forward structure based on it a pin diode.

So, you can as tart with an i- layer and supply it with a p+-type layer from one side and an n+-type layer from the other side. Where the p and n end layers are heavily doped emitter regions.

These layers can be in form of heterojunctions where the n+-layer is made of a-Si heavily doped with n-type impurity and the same is valid for the p- type layer.

The n-side is covered wit ITO and the p-side is supplied by silver metal layer.

This is a proposal for you.

To be able to design a solar cell please refer to my book chapter:Chapter Solar cells and arrays: Principles, analysis and design

Best wishes

Yes you can but the thickness of the active layer should be very less (

NO. It is always advisable to dope the material before usage.