Hello Community,

For my current PhD project, I am looking for the possiblity to bond a pyrex glas wafer to silicon wafers using an intermediate silicon-oxide layer. Unfortunately, a standard anodic bonding process cant be used since I want to integrate electrodestructures in between the two wafers without having electrical contact between the electrodes and the Si. The intermediate layer serves therefore as an insulator and bond support.

I was thinking about using PECVD processes (or another deposition process like PVD) to deposite silicon dioxide on my electrodes mounted on the glass wafer. Then I planed to anodically bond the silicon dioxide layer to a silicon wafer.

Has somebody gathered some experience in this?

Kind regards,

Karl T