Hi,
Yes it is possible to do the measurements at frequencies lower than 1 MHz. You can do them basically from 10 KHz till 500 KHz and off course limitations also depend on your test set-up.
Thank you! Can you please elaborate on the limitations of the set-up?
The value 1MHz is usual, but can be changed.
Limitations: A frequency is still HF, until the C-V curves of the MOS structure presents an increasing profile from accumulation to strong inversion. At low frequencies, the CV curve presents a minimum, because to the generation rate of the minority carrier is higher than the frequency of the applied signal.
In research papers I have seen 500 KHz to 1 MHz is generally used as high frequency for C-V. These are considered as high because these are higher that the carrier generation rate in the semiconductor. So at HF CV, in the inversion region capacitance will not increase as in the case of LF CV, where semiconductors get sufficient type to supply minority carriers under the gate, needed for strong inversion. Again, temperature, photon illumination etc. can change the generation rate.
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