I am doing Eldo simulations for different nodes of PTM cards (i-e 32nm and 45 nm) that support MOSFET BSIM model 4 (level 60). Following parameters are measured for ptm 32 nm:
1: I_on (drive current) Measurement: 1.2103E-03
2: IOFF_N = 9.2818E-10
As i compare it with ITRS roadmap data and MASTAR results, Eldo measurements are no way near!
e-g I_on for ITRS for same node is Ion_n = 1.09E+03 uA/um
I_Off is 79.583 nA/um.
As both use different device equations but still the difference is not understandable!. Can someone tell me the reason? And what are the units of I_on and I_off in Eldo simulations for BSIM model? I couldnt find. . So i assume the same as ITRS.
What is your normalized Ion? The value of Ion you got may be for a width of few nanometers. Convert your Ion to uA/um.
Its is for a width of 1 micrometer. I got the answer by simply converting the current to microAmperes and nanoampreres. For nMOS currents are OK, but for pMOS they are weird e.g 1.2e10 A for 32 nm node. I used 22nm ,32 nm & 45 nm ptm cards in eldo with BSIM level 60. Sir can you guide me why is the response so weird?
The currents computed from your simulation are for the particular width that you are using for your devices. Normalize the currents (divide by width) and compare the normalized current values i.e in uA/um units.
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