SiC MOSFETs can be switched at higher switching frequency as compared to Si IGBTs or Si MOSFETs. The electron and hole mobility of SiC is lower than Si. However, the saturation drift velocity of SiC is higher than Si. Can anyone kindly explain the higher speed switching of SiC MOSFETs than Si MOSFETs or Si IGBT in terms of electron mobility, hole mobility and saturation drift velocity?

(I know that the gate capacitance is smaller in SiC and internal gate resistance is higher. So, the capacitor can be charged and discharged very fast with lower external gate resistance. Therefore, the device can be turned on and turned off very fast)