I am fabricating MOS capacitors based on high-k gate dielectrics using reactive sputtering. Can you please suggest me the technique(DC or RF sputtering) which will yield the high quality gate oxide.
Dear Liro, thank you very much for your valuable input. I would like to tell you that we are limited with fabrication facilities in our lab i.e only we do have sputtering systems. One more thing I would like to add in this regard that I want to fabricate these high-k oxides on SiC substrate to study the suitability of the structure for high temperature applications. Now you suggest me, whether should I use DC or RF sputtering for above stated purpose and also suggest good literature in this regard.
Atomic Layer Deposition (ALD) or MOCVD (Metal-Organic Chemical Vapor Deposition) are the two standard techniques for depositing high quality high-k gate dielectric layer for silicon MOSFETs. But, these layers are not deposited directly on silicon. An intermediate layer (IL) of silicon dioxide or silicon oxynitride is thermally grown first on silicon and then the high-k layer is deposited. The IL is necessary to keep the interface trap density to a reasonable level; otherwise, no MOS device would be useful for anything.
It is very difficult to grow a satisfactory intermediate layer on SiC. A high-k layer directly on the SiC would be useless. DC or RF sputtering of a high-k layer on SiC would yield in my opinion a useless device.
Hej Satyendra,
I my research is primarily focused on studying high-K dielectrics on 4H-SiC for high temp and high radiation applications. We use ALD to deposit our dielectric without any interlayer and we get a fairly good results with such depositions. Also, a group in IIT Mardas have used reactive ion sputtering to deposit Al2O3 on 4H-SiC anhd have achieved good breakdown characteristics link is given below. So, I'm not quite certain of Dr.Samares observations that depositing high-k directly on SiC would be useless. If you can say me which high-k based dielectric you are looking for I might be able to help you some literature?
http://www.sciencedirect.com/science/article/pii/S0040609016300177
Thanks Sethu Sir, I am working with ZrO2, HfO2 and Ta2O5. Your any input is highly appreciable. Can you suggest me best technique of wafer (SiC) cleaning.
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