I have been working on sesqui-chalcogenides, i.e., M2X3 structure where M=transition metal and X=chalcogen with VASP. After simulating the bandstructure for both the non spin-polarised and spin-polarized case, I found two different bandgaps that are far different. I tried to reproduce the data on Nb2Se3 and found the bandstructure and Density of States to be the similar. hence I hope my results are accurate. Only problem is I got a negetive value (-2.9 eV) for ISPIN=1 and 0.007 for ISPIN=2 and their TDOS is also different. I have attached the plots here.
Bandgap and TDOS are solely dependent on the crystal structure and material itself, aren't they? Then why do I get different results? Which one is accurate,polarised or non-polarized case? The situation really gets worse, as a negative bandgap might be an indication of topological insulation (band inversion). How do I know if the band is really inverted and it is topological insulator or it is metal and the negative value is due to the underestimation of bandgap by LDA and GGA?