I am looking for controlling the film thickness of Nickel on glass by sputtering. Any possible suggestions(papers) for mechanism, by which I can analyse the parameters?
I do not understand your question exactly. The sputter yield depends on the type of material (binding energy), the voltage drop at the target and the type of sputter gas. The film growth speed is also related to the sputter pressure. The more scattering of the sputtered atoms by the sputter gas (mostly Ar) the lower the growing speed.
I think you want to control the thickness of sputtered Ni on glass.
Many sputtering system comes with thickness monitor. If not, then at first you can standardize your deposition process and do few runs following the same recipe but only varying deposition time. This will give you the deposition rate. So, by following same recipe and changing the deposition time , you can nearly control the thickness of the deposited layer.
Since the thickness depends on parameters such as gas pressure/flow rate, power, etc I would suggest that you fix the gas pressure/flow rate and vary the power (at least two values) to get at least two samples. Then determine the thickness by talystep or AFM and then extrapolate to get thicknesses for the rest of other power values. You can do the same, by varying the gas pressure/flow rate while fixing the power. Make sure to use the the step vacuum tape on the substrate, for thickness measurements.
I am according with Gourab Dutta, because if you increase the power is possible that increase the roughness too.
If you used the thickness monitor, you have to determine the tooling factor, according the distance between sustrate-target and target-monitor detector.
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