Aluminum oxide is used for n-type silicon solar cell for passivation. But, which has greater impact on passivation: ALD or PECVD aluminum oxide?
By scanning the literature one finds that both processes are used to passivate the crystalline silicon surface for solar cells. One can achieve as low surface recombination velocity as 10cm/s which points out good passivation effect of the active recombination centers at he silicon surface. This is provided that one has to optimize the deposition conditions in both cases. Another concern is which is the easier process. For more information you can follow the papers in the links:http://iopscience.iop.org/article/10.1143/APEX.3.012301/meta
and :https://www.sciencedirect.com/science/article/pii/S187661021401265X
Best wishes
Dear Sukhendu Jana,
The answer couldn't`t be better than Prof. Abdelhalim Zekry one. You have to optimize the growth parameters itself in the first case. However, I would like to recommend ALD because of precise growth mode, which would grow higher quality film (low roughness- defect free- homogeneity) on the well-cleaned Si substrate than PECVD.
Dear All,
Thank you for sharing your thoughts. I think the cost of ALD is much more higher than PECVD. Moreover, the field effect passivation and chemical passivation both are important parameters to enhance the efficiency of the solar cell.
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